Special Topic on Tunnel Field-Effect Transistors
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چکیده
منابع مشابه
Modeling, Fabrication and characterization oF Silicon tunnel Field-eFFect tranSiStorS
Over the last decades, the continuous down-scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) enabled faster and more complex chips while at the same time the space and power-consumption was kept under control. However, in the future, the further reduction of the power consumption per unit area will be restricted by a fundamental limit of the inverse subthreshold swing of M...
متن کاملQuantum mechanical solver for confined heterostructure tunnel field - effect transistors
Submitted for the MAR14 Meeting of The American Physical Society Quantum mechanical solver for confined heterostructure tunnel field-effect transistors DEVIN VERRECK, imec, KU Leuven, MAARTEN VAN DE PUT, BART SOREE, imec, Universiteit Antwerpen, ANNE VERHULST, imec, WIM MAGNUS, imec, Universiteit Antwerpen, WILLIAM VANDENBERGHE, University of Texas at Dallas, GUIDO GROESENEKEN, imec, KU Leuven ...
متن کاملComment on ‘Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate’
In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron–hole bilayer tunnel field-effect transistor with symmetrically arranged gates (Jeong et al 2015 Semicond. Sci. Technol. 30 035021). Delayed alignment of the first electron and hole energy...
متن کاملStudy on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region
Although the Tunnel Field-Effect Transistor (TFET) is a promising device for ultra-low power CMOS technology due to the ability to reduce power supply voltage and very small off-current, there have been few reports on the control of VT for TFETs. Unfortunately, the TFET needs a different technique to adjust VT than the MOSFET because most of TFETs are assumed to use on SOI substrates. In this p...
متن کاملComparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors
As an add-on device option for the ultra-low power CMOS technology, the double-gated vertical-channel Tunnel Field-Effect Transistors (TFETs) of different source configurations are comparatively studied from the perspectives of fabrication and current drivability. While the Top-Source design where the source of the device is placed on the top of the fin makes the fabrication and source engineer...
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ژورنال
عنوان ژورنال: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
سال: 2020
ISSN: 2329-9231
DOI: 10.1109/jxcdc.2021.3053416